C. ‘Raman’ Kothandaraman
C. Kothandaraman is a Research Staff Member at IBM Research in Yorktown Heights, NY. He received his B.Tech., degree from Indian Institute of Technology, Madras, India and his PhD from Columbia University, NY, USA. At IBM, he played a critical role in the development and characterization of IBM’s 3D TSV technology. He has published widely on the impact of 3D TSV technology and chaired several technical sessions in this field. His current research interests include 3D integration, non-volatile memories, magnetic materials and devices for advanced CMOS applications. He has published over 50 papers and holds more than one hundred patents relating to advanced CMOS technologies.
Invited Talk Topic: Principles of Optical Electronic and Mechanical characterisation of Through Silicon Vias (TSV) for 3D integration
The introduction of TSV into advanced CMOS technology nodes can perturb the underlying devices through interactions via the thermal, electrical and elastic fields. To properly evaluate these interactions one must use techniques drawn from optical, electronic and mechanical test methodologies. Characterization techniques from these three disciplines relevant to TSV are described along with their application in appropriately designed test-structures. Examples of their use in failure-analysis as well as characterization of yield and reliability of TSV enabled CMOS technologies are described.
Keywords – TSV, 3D integration, Characterization, Failure-analysis.