Baozhen Li is a Senior Technical Staff Member (STSM) at IBM Systems. He has been working on technology reliability for more than 20 years. His experiences cover a wide range of reliability aspects, including electromingttion (EM), stress migration (SM), dielectric breakdown (TDDB), thermal mechanical stability and chip-package interactions (CPI). In addition to reliability studies for leading edge semiconductor technology development, he also works on reliability design optimization and chip level reliability for high end computing systems. He publishes and patents extensively in the semiconductor technology and reliability area. He has given multiple tutorials and invited talks at international conferences and wrote multiple invited introductory papers in journals. He received a bachelor’s degree from Northeastern University in China and Ph. D degree from the University of Notre Dame in USA.
Invited Talk Topic: Advanced On-Chip Interconnect Reliability
For high performance computing applications, the on-chip interconnect not only needs to carry high electrical current and support high Vmax devices, but also must sustain extremely low reliability failure during long product lifetime. To meet these challenges, a good understanding of translating element reliability to system level reliability is essential. In this talk, discussions will be made on reliability failure characteristics and statistics from simple elements to more complicated systems. Examples will be given on electromigration (EM) failure probability from a simple via/line structure to on chip power grid, including how the redundancy and current redistribution impacts EM lifetime and failure statistics. Details will also be discussed on thermal interactions among the neighboring elements and their impact on reliability failure and scaling.