Invited Papers


C. ‘Raman’ Kothandaraman

C. Kothandaraman is a Research Staff Member at IBM Research in Yorktown Heights, NY. He received his B.Tech., degree from Indian Institute of Technology, Madras, India and his PhD from Columbia University, NY, USA. At IBM, he played a critical role in the development and characterization of IBM’s 3D TSV technology. He has published widely on the impact of 3D TSV technology and chaired several technical sessions in this field. His current research interests include 3D integration, non-volatile memories, magnetic materials and devices for advanced CMOS applications. He has published over 50 papers and holds more than one hundred patents relating to advanced CMOS technologies.

Invited Talk Topic: Principles of Optical Electronic and Mechanical characterisation of Through Silicon Vias (TSV) for 3D integration

The introduction of TSV into advanced CMOS technology nodes can perturb the underlying devices through interactions via the thermal, electrical and elastic fields. To properly evaluate these interactions one must use techniques drawn from optical, electronic and mechanical test methodologies. Characterization techniques from these three disciplines relevant to TSV are described along with their application in appropriately designed test-structures. Examples of their use in failure-analysis as well as characterization of yield and reliability of TSV enabled CMOS technologies are described.

Keywords – TSV, 3D integration, Characterization, Failure-analysis.

Dr Lihong Cao

Lihong Cao is a Director in ASE Group responsible for new packaging technology development (2.5D/3D, FOWLP, FOCoS, PoP, SIP, SESUB), technology promotion, new product introduction, technical program management, strategic planning, and business engagement. Her focusing spans from design, process qualification, root cause analysis and production enablement in HPC (High Performance Computing), AI/MI (Artificial & Machine Intelligence) and 5G/mmWave.

Prior to joining ASE, as a Sr. Manager in AMD, she led global package analysis operations to support product development, qualification, production and customer issues for 28/16/14/7nm technology. She was also in charge of failure analysis technique development and roadmap for advanced package analysis. She not only has semiconductor industries experience, but also had academic and professional experience in National Research Institute and Universities.

Lihong received her Doctoral degree in Material Science & Engineering in Wuhan University of Technology and Research Associate Professor in Nanyang Technology University in Singapore. She has published more than 80 technical papers and held several US patents. She has been a Technical Chair and Tutor in ISTFA since 2011. She was invited as panel member in ISTFA 2018.

Invited Talk Topic: Challenge for Advanced Package Level Fault Isolation

 Complex package application in semiconductor process development requires early feedback on systematic and package level defect-driven detractors. The capabilities of current commonly used for non-destructive analysis tools, such as RTX, SAM, TDR and Thermal Imaging, on advanced packaging for 2.5D/3D, FOWLP, PoP have already been exceeded. It is critical to identify current gaps and forecast expected gaps in the package failure analysis in order to provide solutions. New development for the non-destructive fault isolation techniques are discussed on 3D RTX, EOTPR and Thermal Lock-In. The challenge and future development for these techniques are also addressed.

Dr. Baozhen Li

Baozhen Li is a Senior Technical Staff Member (STSM) at IBM Systems. He has been working on technology reliability for more than 20 years.  His experiences cover a wide range of reliability aspects, including electromingttion (EM), stress migration (SM), dielectric breakdown (TDDB), thermal mechanical stability and chip-package interactions (CPI). In addition to reliability studies for leading edge semiconductor technology development, he also works on reliability design optimization and chip level reliability for high end computing systems.  He publishes and patents extensively in the semiconductor technology and reliability area.  He has given multiple tutorials and invited talks at international conferences and wrote multiple invited introductory papers in journals. He received a bachelor’s degree from Northeastern University in China and Ph. D degree from the University of Notre Dame in USA.

Invited Talk Topic: Advanced On-Chip Interconnect Reliability

For high performance computing applications, the on-chip interconnect not only needs to carry high electrical current and support high Vmax devices, but also must sustain extremely low reliability failure during long product lifetime.  To meet these challenges, a good understanding of translating element reliability to system level reliability is essential.  In this talk, discussions will be made on reliability failure characteristics and statistics from simple elements to more complicated systems.   Examples will be given on electromigration (EM) failure probability from a simple via/line structure to on chip power grid, including how the redundancy and current redistribution impacts EM lifetime and failure statistics.  Details will also be discussed on  thermal interactions among the neighboring elements and their impact on reliability failure and scaling.

Dr. David Su

David Su was Director of the Failure Analysis Division of TSMC in charge of reliability-related failure analysis, materials and surface analysis including TEM, and chemical analysis from 2000 until 2018. Prior to joining TSMC, he was Director of TEM and FIB Technology Development at Accurel Systems in Sunnyvale, California (1998-2000). From 1991 to 1998 he was TEM Specialist at the Materials Analysis Group of Philips Semiconductors in Sunnyvale, California. He was an adjunct professor at the Department of Materials Engineering at San Jose State University in San Jose, California from 1989 to 1991. David Su received his B.S. degree in Chemical Engineering from the University of Sao Paulo, Brazil and his M.S. and Ph. D. degrees in Chemical Engineering from Stanford University. He has been a board member of the Taiwan Microscopy Society since 2004. He was a board member of the Electronic Device and Failure Analysis Society of the U. S. (2014-2016) and Chair of the Sematech Integrated-Circuit Failure Analysis Council (2013). He was chairman of the 2010 IRPS Failure Analysis Technical Program and was International Chair for ISTFA 2010, 2011 and International Co-Chair in 2013.

Invited Talk Topic: Failure and Materials Analysis in the Logic Integrated Circuit Industry: Status and Challenges in Advanced Nodes

The demands of advanced technology nodes of integrated circuits have pushed failure and materials analysis to their limits. In dynamic fault isolation, improved optical resolution is being constrained by sample preparation. In the materials analysis front, while TEM has very high spatial resolution for imaging, obtaining visual and compositional information, with sub-nanometer resolution, for 3D structures such as fins in FinFET is very challenging. Techniques currently being developed or deployed to address these problems will be discussed including optical and electron beam-based fault isolation, atom probe tomography, He/Ne focused ion beam systems, improvements in FIB and SEM optics and techniques to bring synchrotron-like capabilities to the lab.

Prof. F. Iannuzzo

Francesco Iannuzzo received the M.Sc. degree in Electronic Engineering and the Ph.D. degree in Electronic and Information Engineering from the University of Naples, Italy, in 1997 and 2002, respectively. He is primarily specialized in power device modelling.

He is currently a professor in reliable power electronics at the Aalborg University, Denmark, where he is also part of CORPE, the Center of Reliable Power Electronics. His research interests are in the field of reliability of power devices, including mission-profile based life estimation, condition monitoring, failure modelling and testing up to MW-scale modules under extreme conditions. He is author or co-author of more than 190 publications on journals and international conferences, three book chapters and four patents. Besides publication activity, over the past years he has been invited for several technical seminars about reliability at first conferences as ISPSD, EPE, ECCE, PCIM and APEC.

Prof. Iannuzzo is a senior member of the IEEE (Reliability Society, Power Electronic Society, Industrial Electronic Society and Industry Application Society). He currently serves as Associate Editor for Transactions on Industry Applications, and is secretary elect of IAS Power Electronic Devices and Components Committee. He was the general chair of ESREF 2018, the 29th European Symposium on Reliability of Electron devices, Failure physics and analysis, which scored +400 participants from 43 countries.

Invited Talk Topic: Wear- and Short-Circuit Testing of Silicon Carbide Power MOSFETs

The speech will introduce the present testing techniques for Silicon-Carbide Power Electronic MOSFET, both for wear and short circuit robustness assessment, which are highly demanded for qualification of industrial components. As a major finding, the temperature plays a major role in limiting reliability performance of current-generation devices, and efforts must be devoted in that direction. Modern failure analysis techniques must be used to help in such a process and speed up the learning curve.

Prof. Jian Fu Zhang

Jian Fu Zhang received B.Eng. degree in electrical engineering from Xi’an Jiao Tong University in 1982 and Ph.D. degree from University of Liverpool in 1987. He joined Liverpool John Moores University (LJMU) as a Senior Lecturer in 1992, became a Reader in 1996, and a Professor in 2001.

Dr Zhang has worked on the qualification of devices and processes for over 30 years, specializing in defects, ageing, modeling, and lifetime prediction of CMOS technologies. He is the author or coauthor of over 200 journal/conference papers, including 55 papers in IEEE Transactions and Electron Device Letters, 19 papers at IEDM/Symposium of VLSI Technology, and 35 invited papers/book chapters. He is/was a member of the technical program committee of several international conferences, including IEDM. His research has been supported by IMEC, ARM, Synopsys, Qualcomm, and the Engineering and Physical Sciences Research Council of UK.

Invited Talk Topic: Challenge and solution for characterizing NBTI-generated defects in nanoscale devices 

Negative bias temperature instability (NBTI) is a well known ageing process for CMOS technologies. Many early works were focused on large devices where device-to-device variations (DDV) are negligible. As device sizes downscale to nanometers, DDV becomes substantial. NBTI is a stochastic process and causes a time-dependent DDV. Characterizing the NBTI-generated defects in nanoscale devices has two main challenges. First, current fluctuates with time and this introduces uncertainties in  measurements. Second, the test time is long and costly: to characterize the NBTI-induced DDV, it is essential to repeat the same test on multiple devices. This work reviews recent progresses in addressing these issues. Based on the As-grown-Generation (AG) model, it will be shown that the measurement uncertainties are dominated by As-grown hole traps and can be removed by subtracting the average value. To reduce the test time, the voltage step stress (VSS) technique is combined with the Stress-Discharge-Recharge (SDR) method. This VSS-SDR technique reduces test time to within one hour per device. The model extracted by VSS-SDR is verified by comparing its prediction with the test data obtained under conventional constant voltage stress.

Venkat Ravikumar

Venkat Ravikumar received his Master of Science (Microelectronics) from National University of Singapore in 2007 and has been employed as a Senior member of Technical Staff at Advanced Micro Devices Singapore where he has spent the last 13 years performing Electrical Fault Isolation and Failure Analysis on processors built with the cutting-edge technology node. He mentors research and development efforts for Fault isolation and is responsible for tool, technique enhancements and technology readiness. He is additionally a final year candidate for the Doctorate in Philosophy at the Singapore University of Technology and Design researching on electro-optic effects in transistors. He has received several best paper awards at failure analysis conferences including the most recent best student paper award at ISTFA 2018..

Invited Talk Topic: Challenges in laser probing at spatial resolution compromised technology nodes

Laser probing using NIR lasers at sub-20nm technology has become increasingly difficult due to interaction of the optic probe with multiple transistors. Laser probing waveform is the cumulation of modulations from every active transistor within the optic probe. When multiple transistors are active, they result in “crosstalk” or waveform convolution, resulting in misleading results. In this work, we address some of the typical manifestations of crosstalk and corresponding mitigation strategies for successful probing at resolution compromised technology nodes.