Mario Lanza is a Full Professor at Soochow University since September 2013. Dr. Lanza got his PhD in Electronics in 2010 at Universitat Autonoma de Barcelona. During the PhD he was a visiting scholar at The University of Manchester (UK) and Infineon Technologies (Germany). In 2010-2011 he did a postdoc at Peking University, and in 2012-2013 he was a Marie Curie fellow at Stanford University. Dr. Lanza has published over 100 research papers, including Science, Nature Electronics and IEDM, edited an entire book for Wiley-VCH, and registered four patents (one of them granted with 5.6 Million CNY). He is member of the advisory board of several journals, including Advanced Electronic Materials (Wiley-VCH, Germany), Scientific Reports (Nature Publishing Group, UK), and Nanotechnology (Institute of Physics, UK), and guest editor of an special issue in Advanced Functional Materials (Wiley-VCH, Germany). He is an active member of the technical committee of several world-class international conferences (including IEEE-IEDM, IEEE-IRPS and IEEE-IPFA). Prof. Lanza has received the 2017 Young Investigator Award from Microelectronic Engineering (Elsevier), and the 2015 Young 1000 Talent award (among others), and in 2019 he was appointed as Distinguished Lecturer of the Electron Devices Society (IEEE-EDS). Currently he is leading a research group formed by 15-20 PhD students and postdocs, and together they investigate on the improvement of electronic devices using 2D materials, with special emphasis on two-dimensional (layered) dielectrics and memristors for non-volatile digital information storage and artificial intelligence computing systems.
Invited Talk Topic: Erroneous fabrication and reliability characterization of memristors: how to detect it?
Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different types of computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. In this presentation we describe the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology, and to help researchers to detect those works that (intentionally or unintentionally) show the data in a tricky manner to exaggerate performances and hide weaknesses.