Dr. Andrew Kim
Andrew Kim is a senior staff at CMOS reliability R/D team of NSG (Non-volatile memory Solutions Group), Intel Corporation, Folsom, CA, USA. His current focus is BEOL reliability of Cu interconnects. He served as a chair/vice-chair of Dielectric Committee of IRPS2019/2018. Since 1998, he has been working on semiconductor interconnect reliability, BEOL process integration, eFuse design/reliability, TCAD on strained silicon, CMP modeling at various companies (IBM, Samsung and Texas Instruments), gas turbine design and system reliability team at General Electric. He received a B.S. with a minor in Mathematics in 1995 from California State University, Fullerton, CA, M.S. and Ph.D., respectively in 1996 and 2001, from Rensselaer Polytechnic Institute, Troy, NY, all in Mechanical Engineering.
Tutorial Topic: BEOL Reliability Tutorial
BEOL (Back-End-Of-Line) interconnect reliability has always been a critical part of advanced semiconductor technology development and qualifications. The key wear-out failure mechanisms include Electro-Migration (EM), Stress-Migration (SM), Thermal-Cycle (TC), inter-/intra-metal Time-Dependent Dielectric Breakdown (TDDB). In this tutorial, physical descriptions and fundamental understanding of the mechanisms will be discussed, along with electrical characterization methods commonly and sometimes specially applied to BEOL interconnects. Self-heating in interconnects will also be discussed for the brief discussion on Irms (Root-Mean-Square) and Ipeak (max. allowed peak current) for metal wires. Reliability engineers in their early career and non-BEOL-reliability colleagues are strongly encouraged to attend.