Dr. Umberto Celano

Umberto Celano is a Senior Scientist at imec (Belgium), with expertise in materials analysis for semiconductor technology, device physics and nanoscale functional materials. He received his Ph.D. in Physics from the University of Leuven – KU Leuven (Belgium) in 2015. His research has established a novel three-dimensional nanoscale imaging technique that combines sensing with sub-nm material removal to study materials in confined volumes. Currently, Dr. Celano’s research interests encompass nanoelectronics, nanophotonic, functional materials and VLSI metrology. In these areas, he conducted research in various institutions including KU Leuven, Osaka University and Stanford University.

Umberto is the recipient of the Rogen A. Haken Best Paper Award at IEDM (2013) and has authored or co-authored 60+ papers in international journals and conference proceedings. He is part of the metrology working group for the International Roadmap for Devices and Systems (IRDS) and acted as member of the early carrier editorial board of Nano Letters. Previously, Umberto received his B.Eng. in Electronic Engineering and a M.Sc. degree in Nanoelectronics with honors from the University of Rome Sapienza, Italy.”

Invited Talk Topic: Correlative Metrology for the Analysis of Ferroelectric Doped-HfO2

Ferroelectric (FE) doped-hafnia (HfO2) holds the promise of a lead-free material system to reignite integrated ferroelectrics in microelectronics with impact on fast switching logic devices, low-power and high-density non-volatile memory and integrated sensors. Therefore, it does not surprise the growing interest of both academic and industrial communities. However, evaluating nanometre-scale materials properties to correlate with FE-device operations represents often a challenge due to the intertwined paraelectric and ferroelectrics effects occurring in thin oxides (e.g., leakage current, charge-trapping, and dielectric breakdown). Here, by using different techniques and device structures, we present a combination of electrical characterization and correlative metrology to access multiple material properties in FE-HfO2. This is reported while maintaining the required nanometric spatial resolution and sensitivity for the analysis of variations in surface potential, leakage current and converse piezoelectric effects.